bd135 / 137 / 139 ? npn epitaxial silicon transistor ? 2007 fairchild semiconductor corporation www.fairchildsemi.com bd135 / 137 / 139 rev. 1.2.0 1 august 2013 bd135 / 137 / 139 npn epitaxial silicon transistor features ? complement to bd136, bd138 and bd140 respectively applications ? medium power linear and switching ordering information part number marking package packing method bd13516s bd135-16 to-126 3l bulk bd1356stu bd135-6 rail bd13510stu bd135-10 bd13516stu bd135-16 bd13716stu bd137-16 bd13710stu bd137-10 bd13716s bd137-16 bulk bd13916stu bd139-16 rail bd13910s bd139-10 bulk bd13916s bd139-16 BD1396STU bd139-6 rail bd13910stu bd139-10 1 to-126 1. emitter 2.collector 3.base
bd135 / 137 / 139 ? features ? 2007 fairchild semiconductor corporation www.fairchildsemi.com bd135 / 137 / 139 rev. 1.2.0 2 absolute maximum ratings stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. in addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. values are at t c = 25c unless otherwise noted. electrical characteristics values are at t c = 25 c unless otherwise noted. h fe classification symbol parameter value units v cbo collector-base voltage bd135 45 v bd137 60 bd139 80 v ceo collector-emitter voltage bd135 45 v bd137 60 bd139 80 v ebo emitter-base voltage 5 v i c collector current (dc) 1.5 a i cp collector current (pulse) 3.0 a i b base current 0.5 a p c device dissipation t c = 25 c12.5 w t a = 25 c1.25 w t j junction temperature 150 c t stg storage temperature - 55 to +150 c symbol parameter test condition min. typ. max. units v ceo (sus) collector-emitter sustaining voltage bd135 i c = 30 ma, i b = 0 45 v bd137 60 bd139 80 i cbo collector cut-off current v cb = 30 v, i e = 0 0.1 a i ebo emitter cut-off current v eb = 5 v, i c = 0 10 a h fe1 dc current gain v ce = 2 v, i c = 5 ma 25 h fe2 v ce = 2 v, i c = 0.5 a 25 h fe3 v ce = 2 v, i c = 150 ma 40 250 v ce (sat) collector-emitter saturation voltage i c = 500 ma, i b = 50 ma 0.5 v v be (on) base-emitter on voltage v ce = 2 v, i c = 0.5 a 1 v classification 6 10 16 h fe3 40 ~ 100 63 ~ 160 100 ~ 250
bd135 / 137 / 139 ? features ? 2007 fairchild semiconductor corporation www.fairchildsemi.com bd135 / 137 / 139 rev. 1.2.0 3 typical performance characteristics figure 1. dc current gain figure 2. collector-emitter saturation voltage figure 3. base-emitter voltage figure 4. safe operating area figure 5. power derating 10 100 1000 0 10 20 30 40 50 60 70 80 90 100 v ce = 2v h fe , dc current gain i c [ma], collector current 1e-3 0.01 0.1 1 10 0 50 100 150 200 250 300 350 400 450 500 i c = 1 0 i b i c = 2 0 i b v ce (sat)[mv], saturation voltage i c [a], collector current 1e-3 0.01 0.1 1 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v b e ( o n ) v c e = 5 v v b e ( s a t ) i c = 1 0 i b v be [v], base-emitter voltage i c [a], collector current 110100 0.01 0.1 1 10 bd139 bd137 bd135 10us 100us 1 m s d c i c max. (pulsed) i c max. (continuous) i c [a], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 p c [w], power dissipation t c [ o c], case temperature
bd135 / 137 / 139 ? features ? 2007 fairchild semiconductor corporation www.fairchildsemi.com bd135 / 137 / 139 rev. 1.2.0 4 physical dimensions figure 6. to-126 (sot-32) unifi ed drawing (tstu, tsstu, standard) package drawings are provided as a service to customers considering fairchild components. drawings may change in any manner without notice. please note the revision and/or date on the drawing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/to/to126aa.pdf . for current tape and reel specifications, visit fairchild semiconductor?s online packaging area: http://www.fairchildsemi.com/packing_dwg/pkg-to126aa_bk.pdf . 1 2 7 ( 6 $ 7 + , 6 3 $ & . $ * ( ' 2 ( 6 1 2 7 & 2 0 3 / < 7 2 $ 1 < & 8 5 ( 1 7 3 $ & . $ * , 1 * 6 7 $ 1 ' $ 5 ' % $ / / ' , 0 ( 1 6 , 2 1 6 $ 5 ( , 1 0 , / / , 0 ( 7 ( 5 6 & ' , 0 ( 1 6 , 2 1 6 $ 5 ( ( ; & / 8 6 , 9 ( 2 ) % 8 5 5 6 0 2 / ' ) / $ 6 + $ 1 ' 7 , ( % $ 5 ( ; 7 5 8 6 , 2 1 6 ' ) 2 5 7 ( 5 0 , 1 $ / / ( 1 * 7 + 6 ( ( 7 $ % / ( ( ' 5 $ : , 1 * ) , / ( 1 $ 0 ( $ 1 ' 5 ( 9 , 6 , 2 1 0 . 7 7 2 $ $ u h y 0 $ ; ' & 2 ' ( / ( 1 * 7 + ' 7 6 6 7 8 7 6 7 8 1 2 1 ( 3 5 2 ' 8 & 7 , 2 1 7 ( 5 0 , 1 $ / 6 7 ' / ( 1 * 7 + ? ; ; to-126 3l
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